TPT5610 transistor (pnp) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: -1 a collector-base voltage v (br)cbo : -25 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=- 10 a, i e =0 -25 v collector-emitter breakdown voltage v (br)ceo ic=- 1 ma, i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =- 10 a, i c =0 -5 v collector cut-off current i cbo v cb =- 20 v, i e =0 -1 a emitter cut-off current i ebo v eb =- 5 v, i c =0 -1 a dc current gain h fe v ce =- 2 v, i c =- 500 ma 60 240 collector-emitter saturation voltage v ce(sat) i c =- 800 ma, i b =- 80 ma -0.5 v base-emitter voltage v be v ce =- 2 v, i c =- 500 ma -1 v transition frequency f t v ce =- 2 v, i c =- 500 ma 350 mhz collector output capacitance c ob v cb =- 10 v, i e =0, f= 1 mhz 38 pf classification of h fe rank a b c range 60-120 85-170 120-240 1 2 3 to-92l 1. emitter 2. collector 3. base TPT5610 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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